INTECIN   20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
artículos
Título:
Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors
Autor/es:
J. LIPOVETZKY; E.G. REDIN; L. SAMBUCO SALOMONE; S.H. CARBONETTO; L. SAMBUCO SALOMONE; F. CAMPABADAL; M.A. GARCÍA INZA; M.A. GARCÍA INZA; J. LIPOVETZKY; A. FAIGÓN; A. FAIGÓN; E.G. REDIN; S.H. CARBONETTO; F. CAMPABADAL
Revista:
THIN SOLID FILMS
Editorial:
ELSEVIER SCIENCE SA
Referencias:
Lugar: Amsterdam; Año: 2016 vol. 600 p. 36 - 42
ISSN:
0040-6090
Resumen:
Hafnium oxide (HfO2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO2 interface at an energy level Et = 1.59 eV below the HfO2 conduction band edge with density Nt = 1.36 × 10^19 cm− 3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work.