INTECIN   20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
artículos
Título:
Exploring the applicability of amorphous films of system In-Sb-Te as phase change materials
Autor/es:
BILOVOL V; ARCONDO B.
Revista:
JOURNAL OF NON-CRYSTALLINE SOLIDS
Editorial:
ELSEVIER SCIENCE BV
Referencias:
Lugar: Amsterdam; Año: 2016 p. 315 - 321
ISSN:
0022-3093
Resumen:
Hereby, we present In-Sb-Te amorphous films grown by pulsed laser deposition technique using, as targets, crystalline ingots (with corresponding stoichiometry) prepared by traditional melt-quenching method. The explored nominal compositions were In50Sb15Te35, about a ternary compound formed in the quasi-binary InTe-SbTe system, metastable at room temperature, and two eutectics In8Sb8Te84 and In10Sb51Te39.Measurements of electrical sheet resistance evidenced that the amorphous films behave as electrical insulators at room temperature and present a giant jump in resistivity towards a conducting state on crystallization. Differential scanning  calorimetry technique complemented the structural information obtained by X-ray diffraction and revealed temperatures of crystallization of the amorphous films as well as their melting points. Due to their temperature characteristics (crystallization temperature≈225 °C and melting  temperature≈540 °C), In10Sb51Te39 film results very attractive from technological point of view. These characteristics could make this eutectic composition a good candidate for using in phase-change memory devices.