Tunneling through surface barrier and modified mass action law in nanostructured metal oxide semiconductors

C. MALAGÙ, M. CAROTTA, M. A. PONCE, C. M. ALDAO

Kracow

Workshop; VII International Workshop on Semiconductor Gas Sensors; 2010

European Centre of Excellence CESIS and the National Centre of Excellence NANOMET

 The mechanism of in and out diffusion of atomic oxygen shows that the donor density depends on oxygen partial pressure by writing the mass action law independet of Fermi level position. We have proposed two mechanisms responsible for conductance variation depending on dynamical equilibrium between gas and semiconductor: a) The first one is responsible for the barrier height (distance of the CBB at surface from the Fermi level) b) The second one is between bulk and gas and is mainly responsible for the barrier shape