Cost-effective solar cells containing copper indium chalcogenides prepared by SILAR method

M.BERRUET; M. VALDES; CERE, SILVIA; MARCELA VAZQUEZ

JOURNAL OF MATERIALS SCIENCE

SPRINGER

Año: 2012 vol. 47 p. 2454 - 2460

0022-2461

CuInSe2 and CuIn(Se1-xSx)2 thin films have been prepared using successive ionic layer adsorption and reaction method (SILAR) to produce CuSe and In2Se3 and subsequent annealing. Glass, TCO and TCO/TiO2 were used as substrates. A duplex layer of TiO2 was deposited by spray-pyrolysis and doctor blade. The thermal treatment leading to the formation of the chalcogenide was carried out in two different atmospheres. The first is an argon atmosphere, where CISe is obtained. The second consisted of a sulfurization process, where sulfur is melted and the vapor mixed into the argon flux, leading to the formation of CuIn(Se1-xSx)2, with x = 0.8. The morphology and composition of the films were characterized by GXRD, micro-Raman spectroscopy and SEM/EDS. Raman spectra and EDS showed an almost complete replacement of the Se atoms by S atoms, with the formation of a quaternary phase. Etching the films in KCN solution was necessary to dissolve remnant secondary phases. Solar cell prototypes prepared with CuInSe2 and CuIn(Se1-xSx)2 show a clear photo-response, although the photocurrent and open circuit potential are still low. This is a promising first result for the production of CuInSe2 and CuIn(Se1-xSx)2 solar cells prepared by SILAR, even if the cells efficiencies are still low.