Relativistic graphene ratchet on semidisk Galton board

LEONARDO ERMANN; DIMA L. SHEPELYANSKY

EUROPEAN PHYSICAL JOURNAL B - CONDENSED MATTER

SPRINGER

Año: 2011 vol. 79 p. 357 - 362

1434-6028

Using extensive Monte Carlo simulations we study numerically and analytically a photogalvaniceffect, or ratchet, of directed electron transport induced by a microwave radiation on a semidisk Galtonboard of antidots in graphene. A comparison between usual two-dimensional electron gas (2DEG) andelectrons in graphene shows that ratchet currents are comparable at very low temperatures. However, alarge mean free path in graphene should allow to have a strong ratchet transport at room temperatures.Also in graphene the ratchet transport emerges even for unpolarized radiation. These properties openpromising possibilities for room temperature graphene based sensitive photogalvanic detectors of microwaveand terahertz radiation.