Monte Carlo simulation of cluster growth in surface defects induced by the tip of a scanning tunnelling microscope

LUQUE N.B., DEL POPOLO M.G., LEIVA E.P.M.

SURFACE SCIENCE

ELSEVIER SCIENCE BV

Año: 2004 vol. 571 p. 319 - 324

0039-6028

First steps are taken to model the electrochemical deposition of metals in nanometer-sized cavities. In the present work, the electrochemical deposition of Cu atoms in nanometer-sized holes dug on Au(111) is investigated through Monte Carlo simulations using the embedded atom method to represent particle interactions. By sweeping the chemical potential of Cu, a cluster is allowed to grow within the hole rising four atomic layers above the surface. Its lateral extension remains confined to the area defined by the borders of the original defect.