Interfacial structure of epitaxial SrTiO3 on Si: experiments and simulations

X.F. WANG; JUAN WANG; QUAN LI; M.S. MORENO; X.Y. ZHOU; J.Y. DAI; Y. WANG; X.G. GONG; D. TANG

JOURNAL OF PHYSICS - D (APPLIED PHYSICS)

Institue of Physics (UK)

Año: 2009 vol. 42 p. 854091 - 854094

0022-3727

The interfacial structure of epitaxial SrTiO3 (STO) on Si has been investigated using combinedexperimental and theoretical approaches. Together with high resolution high angle annulardark field image, spatially resolved electron energy loss spectroscopy (EELS) acquired acrossthe STO/Si interface reveals an interfacial region of 1–2 monolayer thickness, which is lackingin Sr, but contains Ti, Si and O. General agreement exists between the experimental EELSresults and the simulated ones, which are obtained based on a classical molecular dynamicsinterface model, disclosing a gradual change in the local atomic coordination symmetry andpossible defect incorporation at the interface.