INVESTIGADORES
MORENO Mario Sergio Jesus
artículos
Título:
Mapping boron in silicon solar cells using electron energy-loss spectroscopy
Autor/es:
M. DUCHAMP; C.B. BOOTHROYD; A. KOVÁCS; S. KADKHODAZADEH; T. KASAMA; M.S. MORENO; B.B. VAN AKEN; J,-P, BARNES; M. VEILLEROT; S.B. NEWCOMB; R.E. DUNIN-BORKOWSKI
Revista:
Journal of Physics: Conference Series
Editorial:
Institue of Physics
Referencias:
Año: 2011 vol. 326 p. 1 - 4
ISSN:
1742-6588
Resumen:
Electron energy-loss spectroscopy (EELS) is used to study the B distribution in a pi-n layered solar cell structure. The boron concentration in the p-doped Si layer is expected tobe ~1021 cm-3 and should not exceed 1017 cm-3 in the neighbouring intrinsic layer. We show thatB concentrations as low as 3×1020 cm-3 (0.6 at. %) can be measured using EELS. Ourmeasurements are in close agreement with real space ab-initio multiple scattering calculationsand secondary ion mass spectrometry measurements.
