INVESTIGADORES
URTEAGA Raul
artículos
Título:
Negative differential resistance in porous silicon devices at room temperature
Autor/es:
O. MARÍN; V. TORANZOS; RAÚL URTEAGA; D. COMEDI; R.R. KOROPECKI
Revista:
SUPERLATTICES AND MICROSTRUCTURES
Editorial:
ACADEMIC PRESS LTD-ELSEVIER SCIENCE LTD
Referencias:
Lugar: Amsterdam; Año: 2015 vol. 79 p. 45 - 53
ISSN:
0749-6036
Resumen:
We report a voltage controlled negative differential resistance(NDR) effect at room temperature in two types of devices basedon porous silicon (PS): thermally oxidized porous silicon multilayerwith Ag electrodes in a sandwich configuration (Ag/c-Si/PS/Ag) and porous silicon single layer with Al electrodes in a coplanarconfiguration (Al/PS/Al). The NDR effect was observed in current?voltage characteristics and showed telegraphic noise. The NDReffects showed a strong dependence with temperature and withthe surrounding atmospheric air pressure. The NDR occurrencewas attributed to the blocking of conduction channels due tocarrier trapping phenomena. We also experimentally demonstrateporous silicon devices exploiting the NDR effect, with potentialapplications as volatile memory devices.