INVESTIGADORES
URTEAGA Raul
artículos
Título:
Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
Autor/es:
O. MARÍN; RAÚL URTEAGA; D. COMEDI; R.R. KOROPECKI
Revista:
IEEE ELECTRON DEVICE LETTERS
Editorial:
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Referencias:
Lugar: New York; Año: 2013 vol. 34 p. 590 - 592
ISSN:
0741-3106
Resumen:
Unidirectional current flow (diode-like behavior)is observed in Al/Nanostructured Porous Silicon/Al structures(Al/SP/Al) after applying a forming electric field (E) for a longtime. We found that rectifying characteristics depend on thedirection of E. The forward direction coincides with the directionof E. The diode direction switches when E is inverted. Therectification factor passes from 200 to 26 from one directionto the other, the effect is reversible and can be repeated severaltimes.
