DIODE FORMING EFFECT IN Al/POROUS SILICON/Al DEVICES

O. MARÍN; RAÚL URTEAGA; D. COMEDI; R.R. KOROPECKI

Benidorm

Conferencia; 9th International Conference PSST-2014; 2014

We present the forming of a diode-like behavior in porous silicon devices with symmetrical aluminum contacts. The effect was observable after applied an electric field for larges times and we found that the forward diode polarization coincides with the field direction. In addition, we found that it is possible to switch the diode polarization changing the direction of the applied electric field. The results show that although the studied devices have symmetrical Al/PS contacts, the results show that the electric field induces asymmetric modifications in the contact barriers.