IFIS - LITORAL   24734
INSTITUTO DE FISICA DEL LITORAL
Unidad Ejecutora - UE
congresos y reuniones científicas
Deposition of p- or n-type amorphous silicon by means of rf-sputtering for junction formation
N. BUDINI; J. A. SCHMIDT; F. VENTOSINOS; A. PACIO; R. D. ARCE; H. JUÁREZ SANTIESTEBAN; R. H. BUITRAGO
Conferencia; 28th European Photovoltaic Solar Energy Conference; 2013
We present results regarding the morphological and electrical characterization of semiconductor junctions formed by deposition of p-type amorphous silicon (a-Si) thin films in a small-scale rf-sputtering pilot system. Our system consists of a rotating sample-holder that positions the substrate over different sputtering targets: ZnO:Al (transparent conducting oxide), Cr (collecting front grid), slightly-B-doped (p--type) Si, heavily-P-doped (n+-type) Si, and Ni (for metal-induced crystallization). The targets, the substrate and the deposition sequence can be freely selected in order to obtain different types of structures. A thermal annealing process is performed after deposition to improve the performance of these devices. This system is expected to be progressively scaled up in a short- to mid-term time period, becoming the first system of this kind in the region allowing the manufacture of commercially viable thin film amorphous or polycrystalline solar cell modules. The results presented here correspond to the first tests of the system by depositing simple p-type a-Si layers on glass substrates and crystallizing them by conventional furnace annealing and rapid thermal annealing. We have obtained large grains with diameters in the order of 100 microns, which is a very promising result. Also, chrome films were deposited to test the front collecting grid.