IFIS - LITORAL   24734
INSTITUTO DE FISICA DEL LITORAL
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
N-TYPE POLYCRYSTALLINE SILICON THIN FILMS AND SOLAR CELLS DEPOSITED BY CVD
Autor/es:
BENVENUTO, A. G.; BUITRAGO, R. H.; VENTOSINOS, F.; SCHMIDT, J. A.
Lugar:
ParĂ­s
Reunión:
Conferencia; 28th European Photovoltaic Solar Energy Conference and Exhibition; 2013
Institución organizadora:
European Photovoltaic Solar Energy Association
Resumen:
We deposit n+ polycrystalline silicon (pc-Si) thin films on glass substrates by atmospheric pressure CVD, using trichlorosilane as a Si source and PCl3 as a phosphorous source. The structural and electrical characterization of the films, involving measurements of X-rays diffraction, reflectance in the UV region, SEM microscopy, electrical conductivity as a function of temperature and Hall effect, reveal a material suitable to act as emitter in a solar cell. To prove the concept we deposit c-Si (p) / pc-Si (n+) junctions, and we characterize them by measurements of the I-V curve and the quantum efficiency. Despite a high series resistance, which degrades the fill factor, the cells show high values of open circuit voltage (~500 mV) and short circuit current (~25 mA/cm2), and a wide spectral response. The results are encouraging for the deposition of low-cost polycrystalline thin film silicon solar cells on glass by CVD.
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