IFIS - LITORAL   24734
INSTITUTO DE FISICA DEL LITORAL
Unidad Ejecutora - UE
artículos
Título:
Transport properties of Cu-AlF3-W and Cu-AlF3-Cu heterojunctions using STS measurements and a DFT-NEGF approach
Autor/es:
NAVARRO, J.L.; ALBANESI, E.A.; MORENO-LÓPEZ, J.C.; PASSEGGI (JR.), M.C.G.; CANDIA, A.E.; NAVARRO, J.L.; ALBANESI, E.A.; MORENO-LÓPEZ, J.C.; PASSEGGI (JR.), M.C.G.; CANDIA, A.E.
Revista:
RESULTS IN PHYSICS
Editorial:
ELSEVIER SCIENCE SA
Referencias:
Lugar: Amsterdam; Año: 2018 vol. 10 p. 813 - 817
ISSN:
2211-3797
Resumen:
To understand and to analyze the transport properties of different metal-insulator systems, we developed an experimental study of the electronic transport properties of AlF3 thin films deposited over a Cu(100) substrate, and a theoretical study to model systems composed by an AlF3 molecule between two metallic Cu(100)-W(100) and Cu(100)-Cu(100) electrodes with different geometries. The left common electrode is always a Cu(100) layer, meanwhile the right changing electrode, W(100) or Cu(100), in some cases is represented as a layer and in others as having a tip ending. Tunnelling current against voltage (I-V) characteristic curves have been obtained by Scanning Tunneling  Spectroscopy (STS) measurements and computed using density functional theory (DFT) with the non equilibrium Green function method (NEGF) within a bias voltage range from −2.5 to 5.0 V. The theoretical curves show low current values, in the order of 10−9 to 10−12, in good agreement with the I-V experimenta lcurves in the same range. This reveals that breakdown response currents begin at higher voltages than 5.0 V. The transmission spectrum, total (DOS) and partial (PDOS) density of states are also presented being the transmission variations addressed in terms of the DOS.