IFIS - LITORAL   24734
INSTITUTO DE FISICA DEL LITORAL
Unidad Ejecutora - UE
artículos
Título:
Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
Autor/es:
OSCAR MARIN; RAUL URTEAGA; DAVID COMEDI; ROBERTO KOROPECKI
Revista:
IEEE ELECTRON DEVICE LETTERS
Editorial:
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Referencias:
Lugar: New York; Año: 2013 vol. 34 p. 590 - 592
ISSN:
0741-3106
Resumen:
Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.