IFIS - LITORAL   24734
INSTITUTO DE FISICA DEL LITORAL
Unidad Ejecutora - UE
artículos
Título:
Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method
Autor/es:
A. DUSSAN; J.A. SCHMIDT; R.R. KOROPECKI
Revista:
ACTA PHYSICA POLONICA A
Editorial:
POLISH ACAD SCIENCES INST PHYSICS
Referencias:
Año: 2014 vol. 125 p. 174 - 176
ISSN:
0587-4246
Resumen:
In this work, a series of boron-doped microcrystalline silicon samples [c-Si:H(B)] were deposited by plasma-
-enhanced chemical vapor deposition, using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant
gas. The concentration of B2H6 in SiH4 was varied in the range of 0100 ppm. The density of states was obtained
from the thermally stimulated conductivity technique and compared with results obtained by the modulated
photoconductivity methods. To explain the poor agreement between the density of states obtained from the
thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the
density of states is very sensitive to experimental errors introduced in the calculation of the nn product (mobility
of electron lifetime of the electron). The thermally stimulated conductivity method is applied here for the rst
time to calculate the density of defect states in the forbidden band of c-Si:H samples.