A Charge-Coupled Device Photometric Study of South Hemispheric Contact Binary AE Phoenicis

J. J. HE; S.B. QIAN; E. FERNÁNDEZ-LAJÚS; C. FARIÑA

ASTRONOMICAL JOURNAL

IOP Publishing

Lugar: Hamilton, Ontario, Canada; Año: 2009 vol. 138 p. 1465 - 1468

0004-6256

The complete charge-coupled device light curves in B, V, R, and I bands of the short-period binary system, AE Phe, are presented. It is found that the light curves of AE Phe belong to typical EW-type light variation. Photometric solutions were derived by using the 2003 version of the Wilson Devinney code. It showed that AE Phe is a W-subtype shallow-contact system (f =14.6%(±0.5%)) with a mass ratio of q =2.5491(±0.0092). The temperature difference between the two components is 227 K. Analysis of the O - C curve suggests that the period of AE Phe shows a long-term continuous increase at a rate of dP/dt =+6.17(±0.44) x 10^-8 days/year. The long-term period increase, the marginal-contact configuration, and the astrophysical parameters of the binary system, all suggest that it is a shallow-contact binary undergoing a thermal relaxation oscillation evolving into a detached binary.