Nanostructured Ga doped ZnO Thin Films prepared by Sol-Gel Spin-Coating

C. D. BOJORGE; H.R. CANEPA; E. A. HEREDIA; N. E. WALSÖE DE RECA

Campinas

Congreso; Annual Users Meeting LNLS/CNPEM (25th RAU); 2015

LNLS/CNPEM

ZnO based films have been actively studied because of their applications as solar cells, gas sensors, piezoelectric transducers, ultrasonic oscillators and for different optoelectronic applications. Besides their interesting optical, electrical and piezoelectrical properties, this material exhibits a high chemical and mechanical stability. ZnO presents novel properties and potential applications in optoelectronic fields because its non linear optical properties, excitonic emission at room temperature and quantum size effect.In the present work we studied pure and Ga-doped ZnO thin films prepared by the sol-gel spin coating technique by grazing incidence small-angle X-ray scattering (GISAXS) and X-ray reflectivity (XR) methods.We also compare the present spin coating pore distribution results with those obtained in previous works.