UNIDEF 23986
UNIDAD DE INVESTIGACION Y DESARROLLO ESTRATEGICO PARA LA DEFENSA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
SO2 sensitivity of gold gate MOS capacitors
Autor/es:
LOMBARDI, R; R ARAGÓN
Lugar:
Atenas
Reunión:
Congreso; Eurosensors XXV; 2011
Institución organizadora:
National Center for Scientific Research "Demokritos"
Resumen:
Gap gate MOS capacitors exhibit changes in their state of charge, monitored by positive shifts of the photocurrent induced by pulsed illumination under constant d.c. bias, proportionally to SO2 concentration in air. Chemically induced charges are negative and their surface densities are twice as high as those obtained for NO2, consistently with doubly charged anions; correspondingly, dynamic range is halved.
