INVESTIGADORES
PASSEGGI Mario Cesar Guillermo
artículos
Título:
An STM and Monte Carlo study of the AlF3 film growth on Cu(111)
Autor/es:
CANDIA, A.E.; GÓMEZ, L.; VIDAL, R.A.; FERRÓN, J.; PASSEGGI (JR.), M.C.G.
Revista:
JOURNAL OF PHYSICS - D (APPLIED PHYSICS)
Editorial:
IOP PUBLISHING LTD
Referencias:
Lugar: Londres; Año: 2015 vol. 48 p. 2653051 - 2653058
ISSN:
0022-3727
Resumen:
We report measurements of AlF3 thin film growth on Cu(111) at room temperature by means of Scanning Tunneling Microscopy. The growth proceeds by the formation of fractal islands characterized by a very corrugated surface. Through uncovered zones and island density we determined a diffusion length of   ~25 nm for the adsorbed molecules. Even with this large diffusion length the step-edges do not appear fully decorated. These experimental results are contrasted with simulations based on a Limited Diffusion Aggregation model and Metropolis Monte Carlo.As well, the results of the AlF3 sub-monolayer growth on Cu(111) are compared with our previous results on Cu(100), finding that both systems show more differences than similarities. Thus, while the growth on Cu(100) shows fully decorated step-edges, on Cu(111), they present non-covered zones even at coverages as high as 0.7 monolayers. Supported on MC simulations we suggest that the qualitative difference between both faces is due to different step-edge behaviour.