ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

M. BERRUET; Y. DI IORIO; M. TROVIANO; M. VAZQUEZ

MATERIALS CHEMISTRY AND PHYSICS

ELSEVIER SCIENCE SA

Lugar: Amsterdam; Año: 2014 vol. 148 p. 1071 - 1077

0254-0584

Solution-based techniques were used to prepare ZnO/CuIn(Se, S)2 heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe2 (CISe) and CuInSe2−xSx (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO2 into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques.