INTECIN 20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35 μm CMOS process
Autor/es:
ECHARRI, M.; FAIGON, A.; CARBONETTO, S.; GARCIA-INZA, M.; LIPOVETZKY, J.
Lugar:
San Antonio, TX
Reunión:
Conferencia; Nuclear and Space Radiation Effects Conference; 2019
Institución organizadora:
IEEE
Resumen:
We present a differential dosimeter based on the mismatch of two identical FOXFETs. The sensor was fabricated in a high-voltage 0.35 μm CMOS process, and it was characterized regarding its response to radiationand temperature.
