INTECIN   20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Temperature dependence of electrical resistance in Ge-Sb-Te thin films
Autor/es:
GARCIA, JOSÉ LUIS; MARIA ANDREA UREÑA; M. FONTANA; B. ARCONDO
Lugar:
Cluj-Napoca
Reunión:
Conferencia; Amorphous and Nanostructured Chalcogenides; 2015
Institución organizadora:
National Institute of Materials Physics
Resumen:
Nowadays, theGeSbTe system is extensively studied for use in the field of both electricaland optical non-volatile memories. The key of this application is based on thechanges in the physical properties (electrical conductivity or refractiveindex) of these films as the product of structural transformation between amorphousor crystalline state. Both states are highly stable and it is relative easy to changebetween them when they are prepared as thin film. In this work, the structureand the electrical behaviour of thin films with compositions Ge13Sb5Te82,Ge1Sb2Te4, Ge2Sb2Te5and Ge1Sb4Te7 are presented. The films obtainedby pulsed laser deposition (PLD) using a pulsed Nd: YAG laser (λ= 355 nm) were structurally characterized by X-ray diffraction. The temperaturedependence of the films electrical resistance was studied from room temperatureto 520 K with several heating rates (2 - 10 K / min). During crystallization,the electrical resistance of the film falls several orders of magnitude in anarrow temperature range. The electrical conduction activation energies of theamorphous and crystalline states and the crystallization temperature weredetermined. The crystallization products were characterized by X-raydiffraction. Results are compared with those obtained by other authors.