Preparation and characterization of In-Sb-Te thin films

BILOVOL V.; A. UREÑA ; B. ARCONDO

Cluj

Conferencia; 7th International conference on Amorphous and Nanostructured Chalcogenides; 2015

We explored the glass forming ability of In-Sb-Te system. By means of the melt quenching technique, crystalline bulk samples were obtained. Using these ingots as a target, employing pulsed laser deposition, In-Sb-Te amorphous thin films (d≈ 160 nm) were obtained, as it was corroborated by means of X-ray diffraction in grazing incidence. We prepared the films with the following nominal stoichiometry: In3SbTe2, In8Sb8Te84 and In8Sb50Te42. In3SbTe2 is a compound formed by an eutectoid reaction at 435°C in the pseudo binary section InSb-InTe, in the equilibrium diagram, while In8Sb8Te84 and In8Sb50Te42 are the compositions of the ternary eutectic points E1 (In2Te5-Te-Sb2Te3) and E2 (In2Te3-Sb-Sb2Te3), respectively. Differential scanning calorimetry revealed that temperatures of crystallization of these amorphous films are in 125-300°C range. The measurements of temperature dependence of sheet resistance of the amorphous semiconducting films allowed following the kinetics of their crystallization and, as a consequence, estimating the activation energy for electric conduction and the semiconductor effective energy gap.