INTECIN 20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
artículos
Título:
6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process
Autor/es:
GARCIA-INZA, M.; CASSANI, M.; CASAL, M.; REDÍN, E.; CASSANI, M.; GARCIA-INZA, M.; REDÍN, E.; CASAL, M.; CARBONETTO, S.; FAIGÓN, A.; CARBONETTO, S.; FAIGÓN, A.
Revista:
RADIATION MEASUREMENTS
Editorial:
PERGAMON-ELSEVIER SCIENCE LTD
Referencias:
Lugar: Amsterdam; Año: 2018 vol. 117 p. 63 - 69
ISSN:
1350-4487
Resumen:
This paper presents the characterization of a thick gate oxide MOSFET for radiotherapy in-vivo dosimetry. The device is an N-channel transistor fabricated in a standard CMOS process using the Field Oxide as gate insulator. Sensitivity, fading, gate bias voltage dependence, percentage depth dose and angular response were assessed using a 6 MV LINAC. Experimental results showed that it is possible to estimate dose with a 3% uncertainty in a range up to 85 Gy with an average sensitivity of 62 mV/Gy. The measurement system noise equivalent dose is 3 mGy.
