Long term effects of charge redistribution in cycled bias operating MOS dosimeter

HOLMES-SIEDLE, ANDREW; FAIGÓN, ADRIÁN; SAMBUCO SALOMONE, LUCAS

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Lugar: New York; Año: 2016 vol. 63 p. 2997 - 3002

0018-9499

Techniques based on bias switching during the irradiation allow to extend the measurement range of MOS dosimeters. The response of the REM RFT300 RADFET dosimeter during bias cycled measurements shows a slow shift of the quasi-steady state threshold voltage value during radiationinduced charge neutralization. This phenomenon was previously explained as due to the presence of border traps. In this work, a recently developed numerical model which included the mainphysical processes leading to hole trapping and neutralization in MOS oxides was used to reproduce this experiment. The application of the model shows that the slow shift of the quasisteady state threshold voltage during neutralization stages is a consequence of the spatial redistribution of trapped charge within the oxide. The effect this phenomenon has on MOS dosimetry is analyzed.