INTECIN   20395
INSTITUTO DE TECNOLOGIAS Y CIENCIAS DE LA INGENIERIA "HILARIO FERNANDEZ LONG"
Unidad Ejecutora - UE
artículos
Título:
Radiation Sensor Based on MOSFETs Mismatch Amplification for Radiotherapy Applications
Autor/es:
J. LIPOVETZKY; S. CARBONETTO; M. GARCÍA INZA; A. FAIGON
Revista:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Editorial:
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Referencias:
Lugar: New York; Año: 2016 vol. 63 p. 1784 - 1789
ISSN:
0018-9499
Resumen:
In this paper we present a new dosimeter based on apair of thick gate oxide MOSFET sensors. A differential circuittopology with a feedback loop provides stabilized output withselectable sensitivity amplification for real-time in vivo dosimetry.Radiation response shows a wide linear output range and aneffective thermal rejection. These properties make this circuitsuitable for dose control in radiotherapy applications.