Protein adsorption on titanium dioxide: Effects on double layer and semiconductor space charge region studied by EIS

O.R. CÁMARA, L.B. AVALLE, F.Y. OLIVA

ELECTROCHIMICA ACTA

PERGAMON-ELSEVIER SCIENCE LTD

Lugar: Amsterdam; Año: 2010 vol. 55 p. 4519 - 4528

0013-4686

The semiconductor properties of an n-type TiO2 oxide surface and its modification by protein adsorption using electrochemical impedance spectroscopy (EIS) were studied. Impedance spectra under steadystate conditions were obtained as a function of electrode potential and human serum albumin (HSA) concentration in solution. The effect of the adsorption potential on the EIS response was also analyzed (Eads -0.70, -0.50 and -0.080 V vs. saturated calomel electrode). The impedance spectra were modeled using different equivalent circuits, and data analysis were performed by data fitting in the whole frequency range, as well as in the low and high frequency ranges. The electric representation that better fit experimental data consisted of two equivalent subcircuits composed by a combination of constantphase elements (cpe1 and cpe2 ) and resistances (Rs and R1 ). The cpe1 element represented the distributed capacity in the semiconductor oxide. The cpe2 element was associated with diffusional processes. We have analyzed EIS data based on a theoretical  calculation of interface apparent capacitance (Capp ) from the cpe1 parameters (Q1 and 1 ) and resistance elements. The changes in capacitance, produced by the presence of HSA, were associated to changes in the space charge layer capacitance of the semiconductor,as a result of the energy band bending near the surface. The values obtained for the R1 element from the theoretical fitting procedures (in the high and whole frequency range) were correlated to the electric resistance inherent to the semiconductor properties having a value of 6.103 ohm/cm2