IFEG 20353
INSTITUTO DE FISICA ENRIQUE GAVIOLA
Unidad Ejecutora - UE
artículos
Título:
Analysis of X-ray absorption spectra of theKandL2,3edges of GaN within the FP-LAPW method
Autor/es:
BONZI E.; GRAD G.
Revista:
APPLIED RADIATION AND ISOTOPES
Editorial:
PERGAMON-ELSEVIER SCIENCE LTD
Referencias:
Lugar: Amsterdam; Año: 2016 vol. 110 p. 244 - 250
ISSN:
0969-8043
Resumen:
Gallium nitride, GaN, is a semiconductor material with several technological applications. In this work we obtainab initioXANES spectra using FP-LAPW method within the DFT formalism using different potentials (LDA, PBE and TB-mBJ) in order to study the electronic properties of the system.The spectra calculated using the effect of the fractional core hole were compared with experimental data obtaining a very good agreement.
