Radiation Damage of High Voltage MOS Transistors Induced by 10 MeV Protons

S. SONDÓN; F. PALUMBO; P. MANDOLESI; M. ALURRALDE; P. JULIÁN; A. FILEVICH

Buenos Aires, Argentina

Workshop; XV IBERCHIP; 2009

Universidad Nacional de la Plata

Design, fabrication and damage characterization of high voltage transistors exposed to radiation is reported in this work. A significative increase in transistors breakdown voltage has been obtained by performing changes on the device´s structure for a standard CMOS process. As these transistors are intended to be used as drivers in SoC operating under a harsh radiation environment, the parameter´s degradation produced by 10 MeV protons was characterized. To counter-act radiation effects on devices and to have an improved reliability on systems that use them a new geometry for high voltage transistors is proposed.