Structural Characterization of Mechanical Milled Doped Zn-Based Semiconductors Powders

LUCAS G. VALLUZZI; L.C.DAMONTE; MARCOS G. VALLUZZI; MARCOS MEYER

San Sebastián

Simposio; International Symposium on Metastable, Amorphous and Nanocrystalline Materials; 2017

ZnX (X=Se, Te) nanosized semiconductors are very attractive for optoelectronic device applications in the green spectral range, due to their direct wide band gap. They usually have cubic crystal structure; they are materials of high absorption coefficient and show p-type characteristics. Since these Zn- based semiconductors can be easily doped and being low cost materials, they can be used as different constituent for solar cells, for example, as back-surface field layers and p-type semiconductor materials for multilayer structures or as the inorganic element in hybrid solar cells. It is known that solar cells efficiency may be improved increasing charge carriers densities and interfacial processes. To reach this purpose nanocrystalline materials and their doping with elements of group III are an excellent option as solar cells constituents.