IFLP   13074
INSTITUTO DE FISICA LA PLATA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
PIEZO-SPECTROSCOPY IN ELECTRONIC AND PHOTONIC MATERIALS AND COMPONENTS: THEORETICAL AB-INITIO AND EXPERIMENTAL APPROACHES
Autor/es:
D. RICHARD; K. PEREIRA DA SILVA; T. ZIER; G. A. TORCHIA; M. R. TEJERINA; V. GUAREPI; A. R. GOÑI
Lugar:
Pucón
Reunión:
Encuentro; Iberoamerican Meeting on Optics and 12th Iberoamerican Meeting on Optics, Lasers and Applications, RIAO 2016 -9th , 21 - 25 November 2016, Pucón, Chile; 2016
Resumen:
            In electronic and photonic components, themechanical deformation field is a relevant property that usually determinestheir behavior and performance. This property can determine guidancecharacteristics, like, the refractive index field and optical losses in photonic components;as well as variations of the electro-resistivity in electronic structures[1,2]. m-Raman and m-luminescence spectroscopies are used to characterizethe residual strain of a certain processing technique or a manufacturing methodwhen a spatial resolution of approximately one micron or less is required[3,4].One of the abovementioned spectroscopies, or a combination of both, can be selected in order toanalyze a specific structure. The choice will depend on the properties of the analyzed materialand the magnitudes of residual strains involved. To carry out this end, theenergy/wavelength shifting of these spectra is generally measured in thedifferent spatial points of the strained component surface or volume. However,the tensor relation between energy shifting of the different peaks andmechanical strain still remains unknown for many optic and electronicmaterials.In this contribution, we present the m-Raman and m-Luminescence lines shifting under different pressureconditions and for different electronic and photonic materials and components.We present theoretical and experimental preliminary results.Related to electronic materials, theshifting of the Raman lines of Si (Silicon) were calculated for different isotropic and non-isotropic pressureconditions usingCHIVES, an ab initio density-functional-theory code[5] and the open-sourcecomputer code QUANTUM ESPRESSO[6]. These results were compared with the Si behavior reported in previousworks. Also, we present a m-Ramanmap around a micro-pore generated by femtosecond laser ablation in siliconsurface. This map shows the low residual strain effect of the pulsed ablation.Related to the photonic materials Nd:YAG,Er:YAG, Nd:Mg:LiNbO3 and LiNbO3 and components, wepresent preliminary measurements of Raman and Luminiscence spectra underhydrostatic pressure and different Raman and Luminescence maps within passiveand active photonic components, where non-isotropic residual strain isgenerated during fabrication process. In the future, we will extend thecombination between ab-initio modeling and experimental measurements to analyzepiezo-spectroscopy of further electronic and photonic materials. References [1] K.Okamoto, Fundamental of Optical Waveguides, Elsiever, USA (2006).[2] V. Sverdlov, Strain-Induced Effects in Advanced MOSFETs,Springer-Verlag (2011)[3] B. Kaleli, T. van Hemert,R.J.E. Hueting and R.A.M. Wolters, Thin Solid Films 57, 541 (2013).[4]A. Ródenas, L. M. Maestro, M.O. Ramírez, G. A. Torchia, L. Rosso, F. Chen, and D. Jaque, J. Appl. Phys. 106,013110 (2009).[5] E. S.Zijlstra, A. Kalitsov, T.Zier and M. E. Garcia, Squeezed Thermal PhononsPrecurse Nonthermal Melting of Silicon as a Function of Fluence, Phys. Rev.X 3,  011005 (2013).[6] P.Giannozzi, et al.,QUANTUM ESPRESSO: a modular and open-source softwareproject for quantum simulations of materials, J.Phys.:Condens.Matter, 21,395502 (2009).
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