IFLP   13074
INSTITUTO DE FISICA LA PLATA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Experimental and ab initio study of 181Ta-doped ZnO semiconductor
Autor/es:
E.L. MUÑOZ; D. RICHARD; P.D. EVERSHEIM; M. RENTERÍA
Lugar:
Ginebra
Reunión:
Conferencia; HFI2010; 2010
Resumen:
We present PAC results in  polycrystalline ZnO semiconductor implanted with (181Hf->)181Ta probes. FP-APW+lo calculations in Ta-doped ZnO were carried out using the supercell method and varying self-consistently the charge state of the impurity. Ta is a triple donor impurity with respect  to Zn2+ in ZnO and thus it can loose 1, 2 o 3 donor electrons under certain circumstances. The comparison between the experimental EFG results and our  ab initio predictions showed that the Ta impurity is in an ionized state (with1,2,or 3  donor electrons removed from the impurity).
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