IFLP 13074
INSTITUTO DE FISICA LA PLATA
Unidad Ejecutora - UE
artículos
Título:
Trivalent dopants on ZnO semiconductor obtained by mechanical milling
Autor/es:
L. C. DAMONTE; V.DONDERIS; M.A.HERNÁNDEZ-FENOLLOSA
Revista:
JOURNAL OF ALLOYS AND COMPOUNDS
Editorial:
Elsevier
Referencias:
Lugar: USA; Año: 2009 vol. 483 p. 442 - 444
ISSN:
0925-8388
Resumen:
Al-doped ZnO powders were obtained by mechanical milling. This n-type oxide material is of interest for application in electronic devices as solar cells. The incorporation of the metal dopant into the ZnO wurtzite structure has been verified by X-Ray diffraction, positron annihilation spectroscopy and optical analysis. The optical reflection measurements were strongly affected by the Al incorporation. The positron annihilation spectroscopy constituted an adequate probe to sense the cation substitution in the doped semiconductor.
