TRIPLET QUANTUM YIELDS IN LIGHT-SCATTERING POWDER-SAMPLES

EUGENIA TOMASINI; ENRIQUE SAN ROMÁN; SILVIA E. BRASLAVSKY

Toledo, España

Congreso; XXIV International Conference on Photochemistry (ICP2009); 2009

Universidad de Castilla la Mancha

TRIPLET QUANTUM YIELDS IN LIGHT-SCATTERING POWDER-SAMPLES MEASURED BY LASER-INDUCED OPTOACOUSTIC SPECTROSCOPY Eugenia P. Tomasini,1 Enrique San Rom¨¢n,1 Silvia E. Braslavsky1,21 Enrique San Rom¨¢n,1 Silvia E. Braslavsky1,2 1INQUIMAE / DQIAyQF, Facultad de Ciencias Exactas y Naturales, University of Buenos Aires, Ciudad Universitaria, Pab. II, C1428EHA, Buenos Aires Aires, Ciudad Universitaria, Pab. II, C1428EHA, Buenos Aires INQUIMAE / DQIAyQF, Facultad de Ciencias Exactas y Naturales, University of Buenos Aires, Ciudad Universitaria, Pab. II, C1428EHA, Buenos Aires 2Max-Planck-Institut f¨¹r Bioanorganische Chemie, Postfach 101365, D 45413 M¨¹lheim an der Ruhr, Germany E-mail: braslavskys@mpi-muelheim.mpg.de D 45413 M¨¹lheim an der Ruhr, Germany E-mail: braslavskys@mpi-muelheim.mpg.de Max-Planck-Institut f¨¹r Bioanorganische Chemie, Postfach 101365, D 45413 M¨¹lheim an der Ruhr, Germany E-mail: braslavskys@mpi-muelheim.mpg.de Laser-induced optoacoustic spectroscopy (LIOAS) has been used for the measurement of absolute emission quantum yields (¦µF) of highly fluorescent powdered samples.1 Excellent agreement was found with the diffuse reflectance data for the same systems.2 Now, we apply the same technique for the determination of triplet quantum yields (¦µT) of light-scattering samples, for which no reliable methods are described so far. A prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, (¦µT) of light-scattering samples, for which no reliable methods are described so far. A prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, systems.2 Now, we apply the same technique for the determination of triplet quantum yields (¦µT) of light-scattering samples, for which no reliable methods are described so far. A prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, (¦µT) of light-scattering samples, for which no reliable methods are described so far. A prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, samples.1 Excellent agreement was found with the diffuse reflectance data for the same systems.2 Now, we apply the same technique for the determination of triplet quantum yields (¦µT) of light-scattering samples, for which no reliable methods are described so far. A prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, (¦µT) of light-scattering samples, for which no reliable methods are described so far. A prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, prerequisite for this LIOAS application is a low ¦µF, measured independently by standard procedures. Extension of the theoretical framework1 shows that, under specific conditions, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, optoacoustic signal, E is the laser pulse energy, R is the sample reflectance, energy, R is the sample reflectance, the following equation, similar to that found for solution samples, applies: where H is the first maximum of the optoacoustic signal, E is the laser pulse energy, R