 Interfacial reactivity and resistive switching phenomenon in MAPI-based memristors

BERRUET, MARIANA; BISQUERT, JUAN; GUERRERO, ANTONIO; PÉREZ-MARTÍNEZ, JOSÉ CARLOS

Conferencia; INTERNATIONAL CONFERENCE ON PEROVSKITE MEMRISTORS AND ELECTRONICS 2021; 2021

NanoGe

Since 2015, when it has been found that halide perovskites possess good memristive properties I, different materials and structures based on halide perovskites have been applied and several resistive switching mechanisms have been proposed II. Among they, conductive filaments formed by the migration of active metal ions and by the migration of halide ions are widely accepted. Here we show what happens when MAPI perovskite is contacted directly with a reactive electrode on top as Silver and how an added thin film of AgI between MAPI and Silver affects the resistive switching response. I-V curves and Impedance Spectroscopy (IS) were performed.