INTEC   05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Effects of 10MeV Proton Irradiation on III-V Solar Cells
Autor/es:
E.YACCUZZI; M.OCHOA; M.BARRERA; E.BARRIGON; S.RODRIGUEZ; M.L.IBARRA; J.GARCIA; E.M.GODFRIN; M.ALURRALDE; F. A. RUBINELLI; C.ALGORA; I.REY-STOLLE; J.PLA
Lugar:
Hamburgo
Reunión:
Conferencia; 31st European Photovoltaic Solar Energy Conference and Exihibition; 2015
Institución organizadora:
IEEE
Resumen:
In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment performed on III-V solar cells. A set of representative devices were irradiated for different fluences, including lattice-matched GaInP/GaInAs/Ge triple junction, GaInP/Ge double junction, and GaAs and Ge single junction solar cells. The methodology applied included the irradiation of two devices of each type; for a better control of the measurements, non-irradiated devices with the same characteristics of those irradiated were used as reference. The devices were monitored before and after each exposure by in-situ characterization of the electrical response under dark and under illumination using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V curve and external quantum. Furthermore, results of the numerical simulation of devices with D-AMPS-1D code are presented in order to give a physical interpretation of the results. DLTS spectroscopy preliminary results for single junction GaAs cells are also presented.