Electrical Properties of TCO-coated macroporous silicon structures

F. A. GARCES; L.N. ACQUAROLI; R. URTEAGA; R.R. KOROPECKI; R. D. ARCE

Malaga

Conferencia; Porous semiconductors science and technology 2012; 2012

The PSST

In this work we present the electrical characterization of a semiconductor (Porous Silicon) PS/TCO (Transparent Conductor Oxide) junction obtained by the deposition of SnO2 onto macroporous silicon, using the spray pyrolysis technique. The Porous Silicon (SP) was prepared by the electrochemical anodization of a silicon wafer. The anodi- zation conditions were chosen so as to produce pore sizes ranging in 0.8 to 1 μm diameter. The transport of charge carriers through the interface was studied by measuring the current-voltage curves in dark and under illumination. The SnO2 was doped with fluorine. We analyzed the effects of the illumination on the electrical properties of the junction. We suggest a model of two opposing diodes, each one associated with an independent current source. The fitting provides information about parameters such as ideality factor, series resistance, shunt resistance, satu- ration currents and the current generated by the sources under illumination. Scanning electronic microscopy im- ages were performed in order to confirm the pore filling and the surface coverage.