INTEC   05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
artículos
Título:
Secondary electron emission in nanostructured porous silicon
Autor/es:
G.D. RUANO; J. FERRON; R.R. KOROPECKI
Revista:
Journal of Physics: Conference Series
Editorial:
IOP Publishing
Referencias:
Año: 2009 vol. 167 p. 12061 - 12065
ISSN:
1742-6596
Resumen:
We studied the reversible reduction induced by ion bombardment of the secondary electron emission (SEE) yield. This effect has been modelled as due to changes in dynamically sustained dipoles related with ions and electrons penetration ranges. Such charge configuration precludes the escape of electrons from the nanoporous silicon, making the SEE dependent on the flux of impinging ions. Since this dipolar momentum depends on the electric conduction of the porous medium, by controlled oxidation of the nanoporous structure we change the conduction features of the sample, studying the impact on the SEE reduction effect. Li ion bombardment was also used with the intention of changing the parameters determining the effect. FT-IR and Auger electron spectroscopy were used to characterize the oxidation degree of the samples at different depth scales of the samples at different depth scales of the samples at different depth scales . FT-IR and Auger electron spectroscopy were used to characterize the oxidation degree of the samples at different depth scales