Internal Strain Distribution in Freestanding Porous Silicon

Y.A. PUSEP; A.D. RODRIGUES; J.C. GALZERANI; R.D. ARCE; R.R. KOROPECKI; D. COMEDI

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

ELECTROCHEMICAL SOC INC

Año: 2009 vol. 156 p. 215 - 217

0013-4651

Elastic properties of freestanding porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. Raman lines corresponding to the longitudinal optical phonons of crystalline and amorphous phases were observed. The amorphous volume fraction increased and the phonon frequencies for both phases decreased with increasing porosity. A strain distribution model is proposed whose fit to the experimental results indicates that the increasing nanoscale porosity causes strain relaxation in the amorphous domains and strain buildup in the crystalline ones. The present analysis has significant implications on the estimation of the crystalline Si domain’s characteristic size from Raman scattering data.