INTEC 05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
artículos
Título:
The Electronic Structure of Surface Chains in the Layered Semiconductor In4Se3(100)
Autor/es:
Y.B. LOSOVYJ, M. KLINKE, E. CAI, I. RODRIGUEZ, J. ZHANG, L. MAKINISTIAN, A. G. PETUKHOV, E. A. ALBANESI, P. GALIY Y. FIYALA, J. LIU, P.A. DOWBEN
Revista:
APPLIED PHYSICS LETTERS
Editorial:
The American Institute of Physics, 01/03/08
Referencias:
Año: 2008 vol. 92 p. 1221071 - 1221073
ISSN:
0003-6951
Resumen:
The ordered 100 surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium In chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with 1 eV band width along the In chain direction. The dispersion of this band is largely due to the hybridization of In-s and Se-p orbitals, but the hybridization between In-s and Se-p and In-p and Se-p orbitals is also critical in establishing the band gap. . © 2008 American Institute of Physics. DOI: 10.1063/1.2894577
