The Bulk Band Structure and Inner Potential of Layered In4Se3

J. LIU, Y.B. LOSOVYJ, T. KOMESU, P.A. DOWBEN, L. MAKINISTIAN, E. A. ALBANESI, A. G. PETUKHOV, P. GALIY, Y. FIYALA

APPLIED SURFACE SCIENCE

Elsevier, 01/05/08

Año: 2008 vol. 254 p. 4322 - 4325

0169-4332

The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure. # 2008 Elsevier B.V. All rights reserved.2008 Elsevier B.V. All rights reserved. Keywords: Layered semiconductors; Bulk band structure; Photoemission; FP-LAPWLayered semiconductors; Bulk band structure; Photoemission; FP-LAPW