INTEC 05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
artículos
Título:
Simplified method for the evaluation of the reverse dark current?voltage characteristic of thin film devices
Autor/es:
F. A. RUBINELLI; M.DE GREEF
Revista:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Editorial:
WILEY-V C H VERLAG GMBH
Referencias:
Lugar: Weinheim; Año: 2015 vol. 252 p. 2129 - 2141
ISSN:
0370-1972
Resumen:
An algorithm that simplifies the evaluation of the reverse darkcurrent?voltage (J?V) characteristic of semiconductor thin filmdevices is presented. This algorithm, recognized with thesymbols ?0KRDA?, is an approximation of the SRH formalismthat can be used when the dangling bond density is modeled witheither the UniformDensityModel orwith theDefectPoolModel.The 0KRDA is designed to replace the 0K-Simmons?Taylorapproximation (0KSTA) in reversed biased junctions operatingunder dark conditions. The dependence of the current density Jwith respect to the applied voltage V predicted with SRHformalism is well replicated by the 0KRDA. The smalldifferences obtained in the calculated reverse dark currentscan be removed by neglecting the contribution of gap states withenergies closer than kT/5 to the intrinsic trap level. The transportphysic controlling the shape of reverse dark J?V curves of thinfilm devices can be more easily visualized with the 0KRDA.
