INTEC   05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
artículos
Título:
Kinetics of electron induced desorption of hydrogen in nanostructured porous silicon
Autor/es:
G.D. RUANO; J. FERRÓN; R. D. ARCE; R. R. KOROPECKI
Revista:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Editorial:
WILEY-V C H VERLAG GMBH
Referencias:
Lugar: Hamburg; Año: 2011 vol. 208 p. 1453 - 1457
ISSN:
1862-6300
Resumen:
We found that nanostructured porous silicon obtained by anodization desorbs hydrogen under electron bombardment. The kinetics of this electron induced effusion can be explained neither in terms of thermal processes nor by direct transference of energy from the impinging electron to the Si-H bonds. We show that short lived-large energy fluctuations (SLEFs), occurring during bimolecular recombination processes of carriers produce both, a midgap increment of the density of electronic defect states and hydrogen desorption.