IFLYSIB   05383
INSTITUTO DE FISICA DE LIQUIDOS Y SISTEMAS BIOLOGICOS
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
A Computerized Method for Carrier Lifetime Measurement in PN Junctions at High and Low-Level Injection
Autor/es:
S. MONTERO; A.P.CEDOLA; M.A.CAPPELLETTI; E. L. PELTZER Y BLANCá
Lugar:
Montevideo
Reunión:
Taller; Escuela Argentina-Uruguaya de Micro-Nanoelectrónica, Tecnología y Aplicaciones.; 2010
Institución organizadora:
IEEE-EAMTA
Resumen:
A system to determine the minority carrier lifetime in PN semiconductor junctions in the range of 50 ns to 100 ìs has been developed. The measurement is performed by using the Open Circuit Voltage Decay (OCVD) technique. The equipment consists mainly of a data acquisition system based on a PIC16F877A microcontroller, connected to a computer, and software for the control of the entire system, data processing, storage and visualization of results. been developed. The measurement is performed by using the Open Circuit Voltage Decay (OCVD) technique. The equipment consists mainly of a data acquisition system based on a PIC16F877A microcontroller, connected to a computer, and software for the control of the entire system, data processing, storage and visualization of results. been developed. The measurement is performed by using the Open Circuit Voltage Decay (OCVD) technique. The equipment consists mainly of a data acquisition system based on a PIC16F877A microcontroller, connected to a computer, and software for the control of the entire system, data processing, storage and visualization of results. ìs has been developed. The measurement is performed by using the Open Circuit Voltage Decay (OCVD) technique. The equipment consists mainly of a data acquisition system based on a PIC16F877A microcontroller, connected to a computer, and software for the control of the entire system, data processing, storage and visualization of results.