IFLYSIB   05383
INSTITUTO DE FISICA DE LIQUIDOS Y SISTEMAS BIOLOGICOS
Unidad Ejecutora - UE
artículos
Título:
Theoretical Study of Neutron Effects on PIN Photodiodes with Deep-Trap Levels
Autor/es:
M.A.CAPPELLETTI; A.P.CEDOLA; E. L. PELTZER Y BLANCÁ
Revista:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Editorial:
IOP PUBLISHING LTD
Referencias:
Año: 2009 vol. 24 p. 1050231 - 1050238
ISSN:
0268-1242
Resumen:
In the present work, the influence of deep-trap levels on the dark current of silicon PIN
photodiodes under 1 MeV neutron radiation has been investigated by means of a complete
numerical analysis. The computational code used for simulations, developed by the authors,
numerically solves the coupled Poisson and continuity equations on a 2D domain to obtain the
behavior of electronic devices. Recombination through deep levels in the bandgap is described
by the ShockleyReadHall (SRH) theory. Defects caused by radiation are quantified in terms
of the damage coefficient K for the minority carrier lifetime. The effects of the radiation
studied are atomic displacement damages. Results corroborate that the dark current is strongly
affected by energy levels close to the midgap. A relationship between the current damage rate
and the trap level location in the silicon bandgap was obtained. A model to calculate the dark
current of irradiated devices doped with deep impurities is presented. Simulations have
allowed the comparison of radiation tolerances of undoped and gold-doped devices. The
higher gold density has shown a marked improvement of the hardness of the devices to
radiation effects.
studied are atomic displacement damages. Results corroborate that the dark current is strongly
affected by energy levels close to the midgap. A relationship between the current damage rate
and the trap level location in the silicon bandgap was obtained. A model to calculate the dark
current of irradiated devices doped with deep impurities is presented. Simulations have
allowed the comparison of radiation tolerances of undoped and gold-doped devices. The
higher gold density has shown a marked improvement of the hardness of the devices to
radiation effects.
studied are atomic displacement damages. Results corroborate that the dark current is strongly
affected by energy levels close to the midgap. A relationship between the current damage rate
and the trap level location in the silicon bandgap was obtained. A model to calculate the dark
current of irradiated devices doped with deep impurities is presented. Simulations have
allowed the comparison of radiation tolerances of undoped and gold-doped devices. The
higher gold density has shown a marked improvement of the hardness of the devices to
radiation effects.
studied are atomic displacement damages. Results corroborate that the dark current is strongly
affected by energy levels close to the midgap. A relationship between the current damage rate
and the trap level location in the silicon bandgap was obtained. A model to calculate the dark
current of irradiated devices doped with deep impurities is presented. Simulations have
allowed the comparison of radiation tolerances of undoped and gold-doped devices. The
higher gold density has shown a marked improvement of the hardness of the devices to
radiation effects.
K for the minority carrier lifetime. The effects of the radiation
studied are atomic displacement damages. Results corroborate that the dark current is strongly
affected by energy levels close to the midgap. A relationship between the current damage rate
and the trap level location in the silicon bandgap was obtained. A model to calculate the dark
current of irradiated devices doped with deep impurities is presented. Simulations have
allowed the comparison of radiation tolerances of undoped and gold-doped devices. The
higher gold density has shown a marked improvement of the hardness of the devices to
radiation effects.