INTEMA 05428
INSTITUTO DE INVESTIGACIONES EN CIENCIA Y TECNOLOGIA DE MATERIALES
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Schottky barriers measurements through arrheniuos plot in gas sensors bases on semiconductors
Autor/es:
F. SCHIPANI; M. PONCE; C. ALDAO
Lugar:
Mar del Plata
Reunión:
Encuentro; 4to Encuentro de jóvenes investigadores en ciencia de materiales; 2012
Institución organizadora:
Intema
Resumen:
Abstract
The
oxygen adsorption effects on the Schottky barriers height measurements for
thick films gas sensors prepared with undoped nanometric SnO2
particles were studied. From electrical
measurements, the characteristics of the intergranular potential barriers
developed at intergrains were deduced.
It is shown that the determination of effective activation energies from
conduction vs. 1/temperature curves is not generally a correct manner to
estimate barrier heights. This is due to
gas adsorption/desorption during the heating and cooling processes, the
assumption of emission over the barrier as the dominant conduction mechanism,
and the possible oxygen diffusion into or out of the grains.
